HFE’s many vary with this product
This Transistors May Not Be Matched If You Order More Then One
HG RF POWER TRANSISTOR 2SC2510
Semiconductors HG ROHS Compliance,
Silicon NPN POWER TRANSISTOR
Specified 28V,
28MHz Characteristics Output Power : Po = 150WPEP (Min.)
Power Gain : Gp = 12.2dB (Min.)
Collector Efficiency η = 35% (Min.) : C _30dB Intermodulation Distortion : IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
Picture is for Reference purposes only
Actual Product May Vary
HFE’s many vary with this product
This Transistors May Not Be Matched If You Order More Then One
HG RF POWER TRANSISTOR 2SC2510
Semiconductors HG ROHS Compliance,
Silicon NPN POWER TRANSISTOR
Specified 28V,
28MHz Characteristics Output Power : Po = 150WPEP (Min.)
Power Gain : Gp = 12.2dB (Min.)
Collector Efficiency η = 35% (Min.) : C _30dB Intermodulation Distortion : IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
Picture is for Reference purposes only
Actual Product May Vary
