2166.jpg
2166.jpg

HG 2SC1969

$4.56

HG 2s1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications including CB Radios on 27 MHz.

Features:

  • High Power Gain: Gpe >/= 12dB (VCC =
    12V, PO= 16W, f = 27MHz)

  • Ability to Withstand Infinite VSWR Load when Operated
    at:
    VCC = 16V, PO
    = 20W, f = 27MHz

Application:

  • 10 to 14 Watt Output Power Class AB Amplifier Applications in HF
    Band

Quantity:
Add To Cart

HG 2s1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications including CB Radios on 27 MHz.

Features:

  • High Power Gain: Gpe >/= 12dB (VCC =
    12V, PO= 16W, f = 27MHz)

  • Ability to Withstand Infinite VSWR Load when Operated
    at:
    VCC = 16V, PO
    = 20W, f = 27MHz

Application:

  • 10 to 14 Watt Output Power Class AB Amplifier Applications in HF
    Band

HG 2s1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications including CB Radios on 27 MHz.

Features:

  • High Power Gain: Gpe >/= 12dB (VCC =
    12V, PO= 16W, f = 27MHz)

  • Ability to Withstand Infinite VSWR Load when Operated
    at:
    VCC = 16V, PO
    = 20W, f = 27MHz

Application:

  • 10 to 14 Watt Output Power Class AB Amplifier Applications in HF
    Band

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