2SC2510Edited.jpg
2SC2510Edited.jpg

HG 2SC2510

$35.41

HFE’s many vary with this product

HG RF POWER TRANSISTOR 2SC2510

Semiconductors HG ROHS Compliance,
Silicon NPN POWER TRANSISTOR
Specified 28V,
28MHz Characteristics Output Power : Po = 150WPEP (Min.)
Power Gain : Gp = 12.2dB (Min.)

Collector Efficiency η = 35% (Min.) : C _30dB Intermodulation Distortion : IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) 

Quantity:
Add To Cart

HFE’s many vary with this product

HG RF POWER TRANSISTOR 2SC2510

Semiconductors HG ROHS Compliance,
Silicon NPN POWER TRANSISTOR
Specified 28V,
28MHz Characteristics Output Power : Po = 150WPEP (Min.)
Power Gain : Gp = 12.2dB (Min.)

Collector Efficiency η = 35% (Min.) : C _30dB Intermodulation Distortion : IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) 

HFE’s many vary with this product

HG RF POWER TRANSISTOR 2SC2510

Semiconductors HG ROHS Compliance,
Silicon NPN POWER TRANSISTOR
Specified 28V,
28MHz Characteristics Output Power : Po = 150WPEP (Min.)
Power Gain : Gp = 12.2dB (Min.)

Collector Efficiency η = 35% (Min.) : C _30dB Intermodulation Distortion : IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) 

You Might Also Like

Toshiba 2879 NEW (RED DOT)
$200.00
Toshiba 2879 NEW
$200.00
MRF 300
$60.00
BLF-244
$23.00
HG 150-28
$34.99